Growth evolution of Sr-silicide layers on Si(111) and Mg2Si/Si(111) substrates

• Published in: Thin solid films Vol. 508; no. 1-2; pp. 74 - 77
• Main Authors: MIURA, Kentaro, OHISHI, Takuya, INABA, Takashi, MIZUYOSHI, Yusuke, TAKAGI, Noriyuki, MATSUYAMA, Takashi, MOMOSE, Yoshimi, KOYAMA, Tadanobu, HAYAKAWA, Yasuhiro, TATSUOKA, Hirokazu
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 05-06-2006
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Transport properties of condensed matter (nonelectronic); Interfaces; Cracks; Inorganic compounds; Silicides; Growth mechanism; Strontium silicide; Interdiffusion; XRD; Experimental study; Diffusion; Heat treatments; Structural properties
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.06.110

Single phase Sr2Si layers were successfully grown on Mg2Si/Si substrates for the first time. The Sr2Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg2Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi2 phases was suppressed when the layers were grown on Mg2Si/Si substrates. On the other hand, when the layers were grown directly on Si substrates, multiple phase growth took place and the Sr-silicide layers were heavily cracked. The structural properties of the resultant Sr-silicide layers were examined. In addition, the growth evolution of the silicide phases is described.