Magnesium plasma immersion ion implantation on silicon wafers

Magnesium ions were implanted by plasma immersion ion implantation on Si wafers. The vacuum arc plasma gun has a straight configuration, and samples were biased from −2 to −8 kV with 20-μs pulses at 700 Hz, with or without a magnetic field of 150 G, with arc currents of 600 A. Three samples were pos...

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Bibliographic Details

Published in:	Surface & coatings technology Vol. 169; pp. 379 - 383
Main Authors:	Tan, I.H., Ueda, M., Dallaqua, R.S., Rossi, J.O., Beloto, A.F., Abramof, E.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 02-06-2003
Subjects:	Macroparticle filtering Metal oxides Metal plasma immersion ion implantation Vacuum arcs Metal oxides Macroparticle filtering Vacuum arcs Metal plasma immersion ion implantation
Online Access:	Get full text
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