Characterisation of layered heterostructures by means of HRTEM and digital image processing

Characterisation of layered heterostructures by means of HRTEM and digital image processing

The layer thickness and the quality of interfaces in GaAs/AlAs multilayer systems are investigated by means of transmission electron microscopy and digital image-processing techniques. The position of interfaces generally cannot be accurately determined from lattice images by visual inspection. This...

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Bibliographic Details
Published in:Microelectronic engineering Vol. 51; pp. 3 - 9
Main Author: Ade, G
Format: Journal Article
Language:English
Published: Elsevier B.V 2000
Subjects:
Heterostructures
Image processing
Interfaces
Layer thickness
Interfaces
Image processing
Layer thickness
Heterostructures
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Description
Summary:The layer thickness and the quality of interfaces in GaAs/AlAs multilayer systems are investigated by means of transmission electron microscopy and digital image-processing techniques. The position of interfaces generally cannot be accurately determined from lattice images by visual inspection. This is particularly true when thin layer systems are considered. The desired information on the parameters of interest can, however, easily be obtained from images reconstructed by means of the so-called phase method. The AlAs–GaAs interfaces are found to be more abrupt than the GaAs–AlAs interfaces.
Bibliography:SourceType-Scholarly Journals-2
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ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00454-2