Low-Loss and Compact Bends on Multi-Layer SiN-on-SOI Platform for Photonic Integrated Circuits

Low-loss, compact silicon nitride and silicon waveguide bends are demonstrated using COMS-compatible multi-layer PECVD SiN-on-SOI integration platform over the whole C band. The curvature of advanced waveguide bend is designed with linearly changing to reduce bending loss. The bending loss for PECVD...

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Bibliographic Details
Published in:	IEEE photonics technology letters Vol. 33; no. 20; pp. 1131 - 1134
Main Authors:	Gao, F., Xie, W., Li, B., Bu, X., Song, A., Luo, X., Lo, G.-Q.
Format:	Journal Article
Language:	English
Published:	New York IEEE 15-10-2021 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Bend radius Bending Bends C band Chemical vapor deposition Integrated circuits Multilayers Optical device fabrication Optical losses Optical waveguides photonic integrated circuits Photonics Silicon Silicon compounds Silicon nitride SOI (semiconductors) Waveguide bends Waveguides
Online Access:	Get full text
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