Ultrafast electron capture into p-modulation-doped quantum dots

Ultrafast electron capture into p-modulation-doped quantum dots

Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We demonstrate that, as a result of doping, carrier relaxation from the barrier layers to the quantum dot ground states is strongly enhanced due to r...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 85; no. 20; pp. 4570 - 4572
Main Authors: Gündoğdu, K., Hall, K. C., Boggess, Thomas F., Deppe, D. G., Shchekin, O. B.
Format: Journal Article
Language:English
Published: 15-11-2004
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We demonstrate that, as a result of doping, carrier relaxation from the barrier layers to the quantum dot ground states is strongly enhanced due to rapid electron–hole scattering involving the built-in carrier population. Results for p-doped quantum dots reveal a threefold decrease in the room-temperature electron relaxation time relative to corresponding undoped quantum dots. Our findings are promising for the development of high-speed, GaAs-based quantum dot lasers with modulation speeds in excess of 30GHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1815371