Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states

Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states

The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial t...

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Bibliographic Details
Published in:Applied physics letters Vol. 90; no. 5; pp. 053109 - 053109-3
Main Authors: Hall, K. C., Koerperick, E. J., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G.
Format: Journal Article
Language:English
Published: American Institute of Physics 29-01-2007
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Summary:The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2437063