Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals
We investigate the use of photonic crystals for light extraction from high-brightness thin-film AlGaInP light-emitting diodes with different etch depths, lattice constants, and two types of lattices (hexagonal and Archimedean). Both simulations and experimental results show that the extraction of hi...
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Published in: | Applied physics letters Vol. 93; no. 4; pp. 041105 - 041105-3 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
American Institute of Physics
28-07-2008
|
Online Access: | Get full text |
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Summary: | We investigate the use of photonic crystals for light extraction from high-brightness thin-film AlGaInP light-emitting diodes with different etch depths, lattice constants, and two types of lattices (hexagonal and Archimedean). Both simulations and experimental results show that the extraction of high order modes with a low effective index
n
eff
is most efficient. The highest external quantum efficiency without encapsulation is 19% with an Archimedean A7 lattice with reciprocal lattice constant
G
=
1.5
k
0
, which is 47% better than an unstructured reference device. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2963030 |