Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

We investigate the use of photonic crystals for light extraction from high-brightness thin-film AlGaInP light-emitting diodes with different etch depths, lattice constants, and two types of lattices (hexagonal and Archimedean). Both simulations and experimental results show that the extraction of hi...

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Bibliographic Details
Published in:Applied physics letters Vol. 93; no. 4; pp. 041105 - 041105-3
Main Authors: Bergenek, K., Wiesmann, Ch, Wirth, R., O'Faolain, L., Linder, N., Streubel, K., Krauss, T. F.
Format: Journal Article
Language:English
Published: American Institute of Physics 28-07-2008
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Summary:We investigate the use of photonic crystals for light extraction from high-brightness thin-film AlGaInP light-emitting diodes with different etch depths, lattice constants, and two types of lattices (hexagonal and Archimedean). Both simulations and experimental results show that the extraction of high order modes with a low effective index n eff is most efficient. The highest external quantum efficiency without encapsulation is 19% with an Archimedean A7 lattice with reciprocal lattice constant G = 1.5 k 0 , which is 47% better than an unstructured reference device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2963030