Momentum matrix element and conduction band nonparabolicity in wurtzite GaN

• Published in: Applied physics letters Vol. 86; no. 16; pp. 161908 - 161908-3
• Main Authors: Shokhovets, S., Gobsch, G., Ambacher, O.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 18-04-2005
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1906313

Comparing the imaginary part of the dielectric function of wurtzite GaN measured by spectroscopic ellipsometry at room temperature with calculations, we found the values of
E
p
=
(
19.8
±
0.5
)
eV
,
m
0
*
=
(
0.201
±
0.005
)
m
0
, and
F
=
−
0.89
±
0.05
for the momentum matrix element, electron effective mass at the conduction band edge, and parameter
F
describing the influence of remote bands, respectively. We also observed a remarkable nonparabolicity of the conduction band. The data obtained are consistent with
A
sets of valence band parameters reported earlier providing a parameterization of band structure of wurtzite GaN in the vicinity of the
Γ
point.