Cascaded active regions in 2.4 μ m GaInAsSb light-emitting diodes for improved current efficiency

Cascaded active regions in 2.4 μ m GaInAsSb light-emitting diodes for improved current efficiency

By cascading multiple GaInAsSb active regions, the authors have fabricated 2.4 μ m light-emitting diodes that, for a given light output, operate at reduced current and higher voltage, which can be advantageous for battery-powered sensor applications. Tunnel heterojunctions separating emission region...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 89; no. 21; pp. 211108 - 211108-3
Main Authors: Prineas, J. P., Olesberg, J. T., Yager, J. R., Cao, C., Coretsopoulos, C., Reddy, M. H. M.
Format: Journal Article
Language:English
Published: American Institute of Physics 20-11-2006
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:By cascading multiple GaInAsSb active regions, the authors have fabricated 2.4 μ m light-emitting diodes that, for a given light output, operate at reduced current and higher voltage, which can be advantageous for battery-powered sensor applications. Tunnel heterojunctions separating emission regions add no measurable series resistance. Devices are demonstrated at room temperature with continuous wave output.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2392993