Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization

• Published in: Synthetic metals Vol. 90; no. 3; pp. 217 - 221
• Main Authors: Kaabi, L., Gontrand, C., Pinard, P., Balland, B., Remaki, B., Gamoudi, M., Guillaud, G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01-11-1997; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Ionic implantation; Junctions; Physics; Structure of solids and liquids; crystallography; Surface functionalization; Surface functionalization; Junctions; Ionic implantation; Ion implantation; Annealing; Boron fluorides; Doped materials; Boron additions; Silicon; Diffusion; Experimental study; Depth profiles
• DOI: 10.1016/S0379-6779(98)80010-6
• EISSN: 1879-3290
• ISSN: 0379-6779

The proposed work deals with rapid thermal processing of ionic boron (
11B
+) and boron difluoride (BF
2
+), implanted in phosphorusdoped Cz-(100) silicon substrates through protecting oxide films, under different technological parameters. After implantation, the samples were rapidly thermally annealed at temperatures ranging from 900 to 1100 °C, in argon ambient gas, for different annealing durations. The rapid thermal annealings (RTAs) are carried out also, for some samples, after oxide mask removal. The total boron, fluorine as well as oxygen concentrations versus depth profiles, before and after annealing steps, in the SiO
2/Cz-(100) silicon systems were determined using secondary ion mass spectrometry (SIMS). Using a background concentration, the junction depth in the substrate has been investigated under different annealing experimental conditions. The kinetic diffusion process of implanted boron into oxide and monocrystalline silicon during rapid thermal treatments has also been investigated. The reported results show that boron diffusion in the BF
2
+ case is widely reduced during rapid thermal treatments. Discussions of this are based on the effect of both knocked-on oxygen and fluorine on the boron diffusion kinetics.