Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

Drawing upon our current understanding of the weak localization correction to the Drüde conductivity in quasi-two-dimensional systems, a method of measuring the random motion of charge carriers perpendicular to the plane of the quantum confinement is demonstrated. This technique has been applied to...

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Bibliographic Details
Published in:	Applied physics letters Vol. 50; no. 10; pp. 603 - 605
Main Authors:	MENSZ, P. M, WHEELER, R. G, FOXON, C. T, HARRIS, J. J
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 09-03-1987
Subjects:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Localized state Gallium Arsenides Fluctuations Spatial distribution Semiconductor materials Theoretical study Silicon Potential Inversion layer Interface Inorganic compound Heterojunction
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Summary:	Drawing upon our current understanding of the weak localization correction to the Drüde conductivity in quasi-two-dimensional systems, a method of measuring the random motion of charge carriers perpendicular to the plane of the quantum confinement is demonstrated. This technique has been applied to silicon inversion layers and a GaAs heterojunction to determine, with subangstrom resolution, the mean fluctuation of the average perpendicular position of the electron wave function during transport parallel to the potential barrier.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.98094