Image force effects on carrier collection in a -Si:H solar cells

A modified carrier collection model of a-Si:H Schottky-barrier solar cells is proposed to explain the falloff of short wavelength carrier collection efficiency. Schottky-barrier lowering due to image force effects alters the potential distribution near the metal-semiconductor interface. This altered...

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Bibliographic Details
Published in:Applied physics letters Vol. 39; no. 4; pp. 325 - 327
Main Authors: Han, Min-Koo, Anderson, Wayne A., Lahri, R., Coleman, John
Format: Journal Article
Language:English
Published: 15-08-1981
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Summary:A modified carrier collection model of a-Si:H Schottky-barrier solar cells is proposed to explain the falloff of short wavelength carrier collection efficiency. Schottky-barrier lowering due to image force effects alters the potential distribution near the metal-semiconductor interface. This altered potential decreases the carrier collection in a-Si:H solar cells by as much as 30%. Design considerations to improve carrier collection efficiency are also proposed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92708