Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers

• Published in: Applied physics letters Vol. 55; no. 12; pp. 1167 - 1169
• Main Authors: BLOOD, P, KUCHARSKA, A. I, FOXON, C. T, GRIFFITHS, K
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 18-09-1989
• Subjects: ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DATA; ELECTRIC CURRENTS; ENERGY; ENGINEERING; Exact sciences and technology; EXPERIMENTAL DATA; Fundamental areas of phenomenology (including applications); GAIN; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; HIGH TEMPERATURE; INFORMATION; LASERS; MEDIUM TEMPERATURE; NUMERICAL DATA; OPERATION; Optics; Physics; PNICTIDES; RECOMBINATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR LASERS; Semiconductor lasers; laser diodes; SOLID STATE LASERS 420300 > Engineering > Lasers > (-1989); TEMPERATURE DEPENDENCE; THRESHOLD CURRENT; THRESHOLD ENERGY
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.101686

Using quantum well laser devices with a window in the p-type contact, we have measured the relative change of spontaneous emission intensity at threshold with temperature for 58-Å-wide GaAs wells. Over the range 250–340 K the data are in good agreement with the linear relation obtained from a gain-current calculation which includes transition broadening. This linear behavior contrasts with the stronger temperature dependence of the total measured threshold current of the same devices which includes nonradiative barrier recombination processes.