Interfacial reaction study of thermally annealed Ti film on 4H-SiC by soft X-ray emission spectroscopy

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Bibliographic Details
Published in:	Surface science Vol. 493; no. 1-3; pp. 447 - 452
Main Authors:	LABIS, J, OHI, A, HIRAI, M, KUSAKA, M, IWAMI, M
Format:	Conference Proceeding Journal Article
Language:	English
Published:	Lausanne Elsevier Science 01-11-2001 Amsterdam New York, NY
Subjects:	Condensed matter: structure, mechanical and thermal properties Diffusion; interface formation Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Soft X radiation Silicon carbides Surface diffusion Solid-solid interfaces X-ray spectroscopy Experimental study Interface structure Metallic thin films Transition elements Semiconductor substrate Titanium Crystal faces Interface reaction Synchrotron radiation
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Description
ISSN:	0039-6028 1879-2758
DOI:	10.1016/S0039-6028(01)01252-3