The role of AlN buffer layer in AlxGa1-xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0 0 0 1)

• Published in: Journal of crystal growth Vol. 241; no. 3; pp. 297 - 303
• Main Authors: SEO, In-Seok, LEE, Seung-Jae, JANG, Seong-Hwan, YEON, Jeong-Mo, LEEM, Jae-Young, PARK, Yong-Jo, LEE, Cheul-Ro
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01-06-2002
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Iii-v semiconductors; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vapor phase epitaxy; growth from vapor phase; Buffer layer; Atomic force microscopy; Inorganic compounds; Electrical conductivity; Epitaxial layers; Gallium nitrides; Surfaces; Crystal growth from vapors; XRD; Cathodoluminescence; Experimental study; Fabrication property relation; Surface structure; Thin films; Nitrides; Solid solutions; Morphology; MOVPE method; Aluminium nitrides; Growth mechanism; Heterojunctions; Heteroepitaxy; Chemical composition; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01307-6