Micromechanical optoelectronic switch and amplifier (MIMOSA)

We report for the first time the monolithic integration of a micromechanical modulator and a p-n photodiode on a silicon substrate yielding a versatile optoelectronic device. Because both devices are monolithically integrated on a silicon substrate, the combination is compact with minimal parasitic...

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Bibliographic Details
Published in:	IEEE journal of selected topics in quantum electronics Vol. 5; no. 1; pp. 33 - 35
Main Authors:	Waters, R., Patterson, J., Van Zeghbroeck, B.
Format:	Journal Article
Language:	English
Published:	IEEE 01-01-1999
Subjects:	Current measurement Gain measurement Micromechanical devices Monolithic integrated circuits Noise level Optoelectronic devices Photodiodes Silicon Switches Voltage
Online Access:	Get full text
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Summary:	We report for the first time the monolithic integration of a micromechanical modulator and a p-n photodiode on a silicon substrate yielding a versatile optoelectronic device. Because both devices are monolithically integrated on a silicon substrate, the combination is compact with minimal parasitic elements. We demonstrate that such a device combination fields a transistor-like element with positive and negative small-signal voltage amplification. The maximum small-signal voltage gain achieved is 500 while the modulated current of the device exhibits a maximum ON-OFF ratio of 3:1. In addition, while the theoretical current gain of the device is infinite, a 10-pA noise level limited the measured dc current gain to 10/sup 6/.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1077-260X 1558-4542
DOI:	10.1109/2944.748102