Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 48; no. 10; pp. 1318 - 1323
• Main Authors: Sahu, T., Palo, S., Nayak, P. K., Sahoo, N.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-10-2014; Springer
• Subjects: Alloys; Analysis; Electrons; Low-Dimensional Systems; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Quantum Phenomena; Quantum wells; Semiconductor Structures; Electron Mobility; Double Quantum; Ionize Impurity Scattering; Total Mobility; Interface Roughness
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782614100261

The effect of external electric field
F
on multisubband electron mobility μ in an In
0.53
Ga
0.47
As/In
0.52
Al
48
As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze μ. The variation of scattering mechanisms as a function of
F
for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subbands are occupied, the effect of impurity scattering gets enhanced through intersubband interactions. Our results of enhancement in mobility as a function of
F
, can be utilized for low temperature devices.