Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes

• Published in: Solid-state electronics Vol. 50; no. 9-10; pp. 1546 - 1550
• Main Authors: Joo, Hansung, Jeon, Su Chang, Kwon, Yong Hwan, Choe, Joong-Seon, Yun, Ilgu
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-09-2006; Elsevier Science
• Subjects: Applied sciences; Circuit properties; Dark current; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Integrated optics. Optical fibers and wave guides; Long-term annealing; Optical and optoelectronic circuits; Optical receivers; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Waveguide photodiodes; Photodiode (85.60.D); Long-term annealing; Dark current; Optical receivers; Waveguide photodiodes; Annealing; Electric breakdown; Photodiode; Waveguide; Hardening; Breakdown voltage; Optoelectronic device; Optical receiver
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2006.07.019

The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300°C whereas the dark current and the breakdown voltage are almost constant after annealing at 200°C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.