Comparison of epitaxial growth of CoSi2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100)Si

• Published in: Thin solid films Vol. 380; no. 1-2; pp. 127 - 129
• Main Authors: KWON, Yongjae, LEE, Chongmu
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 22-12-2000
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion; interface formation; Exact sciences and technology; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Solid phase epitaxy; growth from solid phases; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Interfacial layer; Inorganic compounds; Cobalt silicides; Solid-solid interfaces; Solid-phase epitaxy; Experimental study; Cobalt; Niobium; Thin films; Siliconizing; Transition elements; Solid state reaction; Hafnium; Titanium; Interface reaction; Thermal annealing; Bilayers
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(00)01485-1