A 40 nm gate length n-MOSFET

• Published in: IEEE transactions on electron devices Vol. 42; no. 10; pp. 1822 - 1830
• Main Authors: Ono, M., Saito, M., Yoshitomi, T., Fiegna, C., Ohguro, T., Iwai, H.
• Format: Journal Article
• Language: English
• Published: IEEE 01-10-1995
• Subjects: Electrodes; Fabrication; Geometry; Hot carriers; Impact ionization; MOSFET circuits; Plasma sources; Plasma temperature; Resists; Solids
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.464413

Forty nm gate length n-MOSFETs with ultra-shallow source and drain junctions of around 10 nm are fabricated for the first time. In order to fabricate such small geometry MOSFETs, two special techniques have been adopted. One is a resist thinning technique using isotropic oxygen plasma ashing for the fabrication of 40 nm gate electrodes. The other is a solid phase diffusion technique from phosphorus doped silicated glass (PSG) for the fabrication of 10 nm source and drain junctions. The resulting 40 mm gate length n-MOSFETs operate quite normally at room temperature. Using these n-MOSFETs, we investigated short channel effects and current drivability in the 40 nm region at room temperature. We have also investigated hot-carrier related phenomena in the 40-nm region. Results indicate that the impact ionization rate increases slightly as the gate length is reduced to around 40 nm, and that both impact ionization rate and substrate current fall significantly as V/sub d/ falls below 1.5 V. This demonstrates that reliability as regards degradation due to hot carriers is not a serious problem even in the 40 mm region if V/sub d/ is less than or equal to 1.5 V.< >