Synthesis and characteristics of CuInS2 films for photovoltaic application

• Published in: Thin solid films Vol. 480-481; no. Complete; pp. 13 - 18
• Main Authors: Hou, Xianghui, Choy, Kwang-Leong
• Format: Journal Article
• Language: English
• Published: 01-06-2005
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2004.11.014

Ternary compound copper indium disulfide CuInS2 is one of the most promising absorber materials for high efficient and low--cost photovoltaic applications. This paper reports the successful deposition of uniform CuInS2 films with well--controlled stoichiometry, through the use of a novel Electrostatic Spray Assisted Vapor Deposition (ESAVD) method. The effects of chemical precursor composition and droplets charge on the film microstructures are discussed. The microstructures and properties of the as--deposited films are characterized using a combination of X--ray diffraction (XRD), scanning electron microscopy (SEM), Energy Dispersive X--ray (EDX), and UV transmittance spectra. A CdS/CuInS2 heterojunction is also produced onto an ITO glass substrate to evaluate the photovoltaic property of the film. The result shows that ESAVD method is a very promising technique to produce high quality CuInS2 films with low cost and high efficiency.