The fabrication technique and electrical properties of a free-standing GaN nanowire

• Published in: Applied physics. A, Materials science & processing Vol. 81; no. 2; pp. 245 - 247
• Main Authors: YU, H. Y, KANG, B. H, PARK, C. W, PI, U. H, LEE, C. J, CHOI, S.-Y
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01-07-2005
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Materials science; Methods of nanofabrication; Physics; Rectification; Reactive ion etching; Electrical properties; Schottky barriers; Gallium nitrides; Nanowires; IV characteristic; Electrophoretic deposition; Deposition process
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-005-3276-3