Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration

We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely...

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Bibliographic Details
Published in:	Physical review. B, Condensed matter and materials physics Vol. 80; no. 19
Main Authors:	Arndt, A., Spoddig, D., Esquinazi, P., Barzola-Quiquia, J., Dusari, S., Butz, T.
Format:	Journal Article
Language:	English
Published:	United States 01-11-2009
Subjects:	CARBON CARRIER DENSITY CHARGE CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS ELECTRIC CONDUCTIVITY GRAPHITE IRRADIATION MAGNETORESISTANCE MONOCRYSTALS NANOSTRUCTURES OSCILLATIONS SHUBNIKOV-DE HAAS EFFECT
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Summary:	We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely sensitive to the induced defects for concentrations as low as {approx}0.1 ppm and follows n{approx}1/R{sub V}{sup 2} with R{sub V} the distance between defects in the graphene plane. These and Shubnikov-de Haas oscillations results indicate that at least a relevant part of the carrier densities measured in graphite is not intrinsic.
ISSN:	1098-0121 1550-235X
DOI:	10.1103/PhysRevB.80.195402