Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist

• Published in: Russian microelectronics Vol. 49; no. 1; pp. 55 - 61
• Main Authors: Oleshkevich, A. N., Lapchuk, N. M., Odzhaev, V. B., Karpovich, I. A., Prosolovich, V. S., Brinkevich, D. I., Brinkevich, S. D.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2020; Springer Nature B.V
• Subjects: Boron; Conductivity; Electrical Engineering; Electron paramagnetic resonance; Electron spin; Electrons; Engineering; Ion implantation; Photoresists; Silicon wafers; Single crystals; Spin resonance; Thick films; electron spin resonance; electronic conductivity; implantation; photoresist; phenoxy radicals
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739719060076

FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon wafers by centrifugation are investigated by their conductivity and electron spin resonance measurements. It is shown that the Р
+
ion implantation leads to the formation of a layer with an electronic conductivity of about 10
−9
Ω
−1
cm
−1
. At a phosphorous implantation dose of 6 × 10
15
cm
−2
, the electron spin resonance spectrum contains a narrow isotropic line with a
g
factor of 2.00654 and a width of 3.83 G, which is most likely related to the formation of phenoxy radicals. As the implantation dose increases to 1.2 × 10
16
cm
−2
, a line with a
g
factor of 2.00264 and a width of 3.96 G is detected in the electron spin resonance spectrum, which is caused by unpaired electrons delocalized according to the π-polyconjugated system.