Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices

Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices

A new technique is suggested that makes it possible to determine the probability of radiative recombination of impact-excited Mn2+ luminescence centers, as well as to find the time dependences of the electron multiplication factor, impact ionization length, and impact ionization coefficient from the...

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Bibliographic Details
Published in:Technical physics Vol. 51; no. 8; pp. 1012 - 1024
Main Authors: Gurin, N. T., Sabitov, O. Yu
Format: Journal Article
Language:English
Published: New York Springer Nature B.V 01-08-2006
Subjects:
Electroluminescence
Ionization coefficients
Multiplication
Phosphors
Radiative recombination
Thin films
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Summary:A new technique is suggested that makes it possible to determine the probability of radiative recombination of impact-excited Mn2+ luminescence centers, as well as to find the time dependences of the electron multiplication factor, impact ionization length, and impact ionization coefficient from the time dependences of the instantaneous internal quantum yield. These dependences follow from the time dependences of the luminance, as well as of the current and charge passing through the phosphor layer, when the devices are excited by a low-frequency ramp voltage.
ISSN:1063-7842
1090-6525
DOI:10.1134/S106378420608010X