X-ray study of structural features of GaSb(Si) single crystals grown using a set of diffraction methods under various heat and mass transfer conditions

• Published in: Surface investigation, x-ray, synchrotron and neutron techniques Vol. 1; no. 3; pp. 255 - 259
• Main Authors: Prokhorov, I. A., Serebryakov, Yu. A., Korobeinikova, E. N., Zakharov, B. G., Ratnikov, V. V., Shul’pina, I. L.
• Format: Journal Article
• Language: English
• Published: New York Springer Nature B.V 01-06-2007
• Subjects: Bridgman method; Convective flow; Crystal defects; Crystal growth; Crystal lattices; Crystal structure; Czochralski method; Diffraction; Gallium antimonides; Heat transfer; Inhomogeneity; Mass transfer; Silicon; Single crystals; Solid solutions; Striations; Substitutional solid solutions; Topography; X ray topography
• ISSN: 1027-4510; 1819-7094
• DOI: 10.1134/S1027451007030044

Structural features of GaSb(Si) single crystals grown under various heat and mass transfer conditions were studied by x-ray topography and by double- and triple-crystal diffractometry. It was shown that a decrease in the convective flow intensity during crystal growth by the vertical Bridgman method with axisymmetric upper heat supply in comparison with the Czochralski method eliminates growth striations (caused by microsegregation) and improves the uniformity of electrical parameters of materials. According to triple-crystal x-ray diffractometry data, the increased density of structural defects observed in some crystal regions causes significant lattice distortions, which makes an additional contribution to crystal inhomogeneity. Some specific features in x-ray topography images of growth striations, caused by a high silicon concentration and a dopant state deviation from an ideal substitutional solid solution, were revealed.