Minimization of X-ray mask distortion by two-dimensional finite element method simulation

X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square window...

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Bibliographic Details

Published in:	Japanese Journal of Applied Physics Vol. 29; no. 10; pp. 2203 - 2206
Main Authors:	KISHIMOTO, A, KUNIYOSHI, S, SAITO, N, SOGA, T, MOCHIJI, K, KIMURA, T
Format:	Journal Article
Language:	English
Published:	Tokyo Japanese journal of applied physics 01-10-1990
Subjects:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Finite element method VLSI circuit Computer simulation Lithography Saturable absorber Theoretical study Mask Distortion X ray Modeling
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