Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

• Published in: Advanced functional materials Vol. 34; no. 34
• Main Authors: Acuna, Wilder, Wu, Weipeng, Bork, James, Doty, Mathew F, Jungfleisch, M. Benjamin, Gundlach, Lars, Zide, Joshua M. O.
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01-08-2024
• Subjects: Biomedical engineering; Biomedical materials; Bismuth; Carrier density; Carrier lifetime; Conduction bands; Electrical resistivity; Energy gap; epitaxial; Excitation; Fermi level; Indium gallium arsenides; Nanocomposites; pentanary; spectroscopy; Switches; Temporal resolution; terahertz
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202401853

Terahertz technology has the potential to have a large impact in myriad fields, such as biomedical science, spectroscopy, and communications. Making these applications practical requires efficient, reliable, and low‐cost devices. Photoconductive switches (PCS), devices capable of emitting and detecting terahertz pulses, are a technology that needs more efficiency when working at telecom wavelength excitation (1550 nm) to exploit the advantages this wavelength offers. ErAs:InGaAs is a semiconductor nanocomposite working at this energy; however, high dark resistivity is challenging due to a high electron concentration as the Fermi level lies in the conduction band. To increase dark resistivity, ErAs:InGaAlBiAs material is used as the active material in a PCS detecting Terahertz pulses. ErAs nanoparticles reduce the carrier lifetime to subpicosecond values required for short temporal resolution, while ErAs pins the effective Fermi level in the host material bandgap. Unlike InGaAs, InGaAlBiAs offers enough freedom for band engineering to have a material compatible with a 1550 nm pump and a Fermi level deep in the bandgap, meaning low carrier concentration and high dark resistivity. Band engineering is possible by incorporating aluminum to lift the conduction band edge to the Fermi level and bismuth to keep a bandgap compatible with 1550 nm excitation.
ErAs:InGaAlBiAs is a semiconductor nanocomposite that is engineered for a photoconductive switch material that is designed for the detection of THz pulses using telecom wavelength excitation. The band engineering allows a bandgap compatible with a 1550 nm pump while having an effective Fermi level deep in the bandgap to have high dark resistance.