Electron energy relaxation and noise characteristics of infrared hot-electron transistors

• Published in: Superlattices and microstructures Vol. 19; no. 2; pp. 115 - 122
• Main Authors: Choi, K.K., Tidrow, M.Z., Chang, W.H.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-01-1996; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Transistor base; Quantum well; Energy distribution; Doping; Infrared detector; Probability; Phototransistor; Background noise; Energy relaxation; Electron capture; Generation recombination noise; Hot electron; Charge transfer
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1006/spmi.1996.0014

In infrared hot-electron transistors, the energy distribution of the injected electrons after passing through the base can be directly measured at the collector. In this work, a theoretical calculation on the evolution of the electron energy distribution in the base is presented. We applied the calculation to devices with different doping densities, and obtained quantitative agreement with the experiment. The result of this calculation can be used for device optimization. We also derived a generalized expression between noise and capture probability of a QWIP. The noise of a QWIP was found to be larger than the conventional expression for generation-recombination noise.