HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

•The GeON/HfO2 gate stack is formed on germanium (111) substrate.•The rapid thermal nitridation was carried out by using NH3.•The GeON forms the stable interface between high-k and Gesubstrate.•The results show the improvement in k value and EOT due to NH3 pre deposition annealing.•The effect of pos...

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Bibliographic Details
Published in:	Applied surface science Vol. 364; pp. 747 - 751
Main Authors:	Agrawal, Khushabu S., Patil, Vilas S., Khairnar, Anil G., Mahajan, Ashok M.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 28-02-2016
Subjects:	Annealing Current conduction mechanism Deposition Gates Germanium Hafnium oxide HfO2 MOS devices Nitrides Passivation PEALD X-ray photoelectron spectroscopy XPS XPS PEALD HfO2 Current conduction mechanism Passivation
Online Access:	Get full text
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