Features of the Interaction of a Radio-Frequency Discharge of Freon R-23 (CHF3) with Gallium Arsenide and Silicon

To provide the formation of the surface topography of semiconductors, a halogen-containing plasma, in particular, freons, is commonly used. The paper describes a comparative atomic force microscopy study of the plasma chemical interaction of freon R-23 with the surface of silicon and gallium arsenid...

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Bibliographic Details
Published in:	Surface engineering and applied electrochemistry Vol. 59; no. 1; pp. 79 - 84
Main Author:	Dunaev, A. V.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-02-2023 Springer Nature B.V
Subjects:	Engineering Freons Gallium arsenide Germanium Intermetallic compounds Machines Manufacturing Processes Radio frequency discharge Silicon surface plasma etching semiconductors topology freons
Online Access:	Get full text
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