Features of the Interaction of a Radio-Frequency Discharge of Freon R-23 (CHF3) with Gallium Arsenide and Silicon

• Published in: Surface engineering and applied electrochemistry Vol. 59; no. 1; pp. 79 - 84
• Main Author: Dunaev, A. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-02-2023; Springer Nature B.V
• Subjects: Engineering; Freons; Gallium arsenide; Germanium; Intermetallic compounds; Machines; Manufacturing; Processes; Radio frequency discharge; Silicon; surface; plasma; etching; semiconductors; topology; freons
• ISSN: 1068-3755; 1934-8002
• DOI: 10.3103/S1068375523010040

To provide the formation of the surface topography of semiconductors, a halogen-containing plasma, in particular, freons, is commonly used. The paper describes a comparative atomic force microscopy study of the plasma chemical interaction of freon R-23 with the surface of silicon and gallium arsenide semiconductors in terms of purity and uniformity of the process. Freon R-23 is commonly used in the technology of industrial etching of Si, Ge, and a number of other materials because it provides acceptable interaction rates while maintaining a uniform surface suitable for further procedures of the technological cycle.