Determination of the Bulk Conductivity of III–V Semiconductors in a Strong Constant Electric Field and under Harmonic Effects

Currently, devices in the region of the microwave and extremely high frequency (EHF) ranges are being developed using the nonlinear properties of the bulk of III–V semiconductors, which manifest themselves under high electric fields. The formation processes of solitons and domains at various strengt...

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 53; no. 15; pp. 1979 - 1982
Main Authors:	Malyshev, I. V., Fil, K. A., Goncharova, O. A.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-12-2019 Springer Nature B.V
Subjects:	Amplitudes Basic Research Carrier density Computer simulation Current carriers Electric fields Extremely high frequencies Field strength Frequency analysis Frequency ranges Group III-V semiconductors Heating Magnetic Materials Magnetism Physics Physics and Astronomy Semiconductors Solitary waves drift and heating equations microwave and EHF conductivities effective mass hot carrier mobility III–V semiconductors electric-field strength output current density
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