Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 50; no. 13; pp. 1720 - 1725
• Main Authors: Pyatilova, O. V., Sysa, A. V., Gavrilov, S. A., Yakimova, L. V., Pavlov, A. A., Belov, A. N., Raskin, A. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-12-2016; Springer Nature B.V
• Subjects: Magnetic Materials; Magnetism; Microelectronic and Nanoelectronic Technology; Physics; Physics and Astronomy; Thick films; chemical etching; ionic mass transfer; nanostructured silicon; silver film; catalyst
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782616130078

The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of Ag
+
ions, caused by the temperature gradient, affects the surface morphology of the structure being formed, depending on the linear size of the mask-catalyst.