Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals

• Published in: Crystallography reports Vol. 66; no. 3; pp. 387 - 393
• Main Authors: Korobeinikova, E. N., Prokhorov, I. A., Bezbakh, I. Zh, Shul’pina, I. L.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-05-2021; Springer Nature B.V
• Subjects: Bridgman method; Crystal growth; Crystallography and Scattering Methods; Czochralski method; Digital imaging; Gallium antimonides; Inhomogeneity; Periodic variations; Physics; Physics and Astronomy; Real Structure of Crystals; Striations
• ISSN: 1063-7745; 1562-689X
• DOI: 10.1134/S1063774521030111

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The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman method (Y
3
Al
5
O
12
:Nd, ZnGeP
2
, GaSb:Te, Ge:Ga) are analyzed. Digital processing of growth striation (GS) images showed the presence of strict periodicity in the GS distribution along the boule length for the Czochralski-grown crystals (rotational GSs) and the absence of systematic GS distribution for the crystals grown by the Bridgman method. Possible reasons for the observed regularities of variation in crystal composition are discussed.