Design of an absorptive MMIC switch for satellite communication system
A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p‐HEMT process for the switch matrix of a satellite communication system. An absorptive MMIC switch is designed for good reflection‐coefficient performances of the input and output ports at both on‐ and o...
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| Published in: | Microwave and optical technology letters Vol. 46; no. 4; pp. 369 - 371 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
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20-08-2005
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| Abstract | A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p‐HEMT process for the switch matrix of a satellite communication system. An absorptive MMIC switch is designed for good reflection‐coefficient performances of the input and output ports at both on‐ and off‐states. A quarter‐wavelength impedance transformer is realized with the lumped elements of an MIM capacitor and a spiral inductor at 3 GHz band in order to reduce the chip size. The MMIC switch covers the frequency range 3.2–3.6 GHz. According to the on‐wafer measurement, the fabricated MMIC switch with a miniature size of 1.6 × 1.3 mm demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the measured performance agrees well with the simulation results. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 369–371, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20989 |
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| AbstractList | A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p‐HEMT process for the switch matrix of a satellite communication system. An absorptive MMIC switch is designed for good reflection‐coefficient performances of the input and output ports at both on‐ and off‐states. A quarter‐wavelength impedance transformer is realized with the lumped elements of an MIM capacitor and a spiral inductor at 3 GHz band in order to reduce the chip size. The MMIC switch covers the frequency range 3.2–3.6 GHz. According to the on‐wafer measurement, the fabricated MMIC switch with a miniature size of 1.6 × 1.3 mm demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the measured performance agrees well with the simulation results. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 369–371, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20989 |
| Author | Park, Jong-Heung Lee, Moon-Que Ryu, Keun-Kwan Yom, In-Bok Shin, Dong-Hwan |
| Author_xml | – sequence: 1 givenname: In-Bok surname: Yom fullname: Yom, In-Bok organization: Communications Satellite Development Group, ETRI, 161 Kajeong-Dong, Yuseong-gu, Daejeon, 305-350, Korea – sequence: 2 givenname: Keun-Kwan surname: Ryu fullname: Ryu, Keun-Kwan organization: Department of Electronic Engineering, Hanbat National University, San16-1 Duckmyoung-Dong, Yuseong-Gu, Daejeon, 305-719, Korea – sequence: 3 givenname: Dong-Hwan surname: Shin fullname: Shin, Dong-Hwan organization: Communications Satellite Development Group, ETRI, 161 Kajeong-Dong, Yuseong-gu, Daejeon, 305-350, Korea – sequence: 4 givenname: Jong-Heung surname: Park fullname: Park, Jong-Heung organization: Communications Satellite Development Group, ETRI, 161 Kajeong-Dong, Yuseong-gu, Daejeon, 305-350, Korea – sequence: 5 givenname: Moon-Que surname: Lee fullname: Lee, Moon-Que organization: Department of Electrical and Computer Engineering, University of Seoul, 90 Cheonnong-Dong, Dongdaemoon-Gu, Seoul, 130-743, Korea |
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| References | J.A. Torres and J.C. Freire, Monolithic transistor SPST switch for L-band, IEEE Trans Microwave Theory Tech 50 (2002), 51-56. S.A. Mass, Microwave mixer, Artech House, Norwood MA, 1992. K.Y. Lin, Y.J. Wang, M.S. Uhm, D.C. Niu, and H. Wang, Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks, IEEE Trans Microwave Theory Tech 51 (2003), 1076-1085. 1997 2000 2003; 51 2002; 50 1992 10.1002/mop.20989-BIB6 Torres (10.1002/mop.20989-BIB2) 2002; 50 Mass (10.1002/mop.20989-BIB5) 1992 Drozdovski (10.1002/mop.20989-BIB3) 1997 Street (10.1002/mop.20989-BIB4) 2000 Lin (10.1002/mop.20989-BIB1) 2003; 51 |
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| Snippet | A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p‐HEMT process for the switch matrix of a satellite... |
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| SubjectTerms | MMIC satellite communication system switch switch matrix |
| Title | Design of an absorptive MMIC switch for satellite communication system |
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