Design of an absorptive MMIC switch for satellite communication system
A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p‐HEMT process for the switch matrix of a satellite communication system. An absorptive MMIC switch is designed for good reflection‐coefficient performances of the input and output ports at both on‐ and o...
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Published in: | Microwave and optical technology letters Vol. 46; no. 4; pp. 369 - 371 |
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Main Authors: | , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Hoboken
Wiley Subscription Services, Inc., A Wiley Company
20-08-2005
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Subjects: | |
Online Access: | Get full text |
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Summary: | A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p‐HEMT process for the switch matrix of a satellite communication system. An absorptive MMIC switch is designed for good reflection‐coefficient performances of the input and output ports at both on‐ and off‐states. A quarter‐wavelength impedance transformer is realized with the lumped elements of an MIM capacitor and a spiral inductor at 3 GHz band in order to reduce the chip size. The MMIC switch covers the frequency range 3.2–3.6 GHz. According to the on‐wafer measurement, the fabricated MMIC switch with a miniature size of 1.6 × 1.3 mm demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the measured performance agrees well with the simulation results. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 369–371, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20989 |
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Bibliography: | ark:/67375/WNG-FW47TPQ8-L istex:3B8353110FA80B5BD14D6F4550F63FB8ADFAB027 ArticleID:MOP20989 |
ISSN: | 0895-2477 1098-2760 |
DOI: | 10.1002/mop.20989 |