Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decr...

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Published in:Applied physics letters Vol. 88; no. 4; pp. 041913 - 041913-3
Main Authors: Yang, Z., Wang, R. N., Jia, S., Wang, D., Zhang, B. S., Lau, K. M., Chen, K. J.
Format: Journal Article
Language:English
Published: American Institute of Physics 23-01-2006
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Abstract The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decreases 47% when the silicon underneath the microbeams is removed. Microbeam bending test is used to measure the Young's modulus of GaN films grown on silicon (111) substrate, yielding a Young's modulus of 330 GPa.
AbstractList The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decreases 47% when the silicon underneath the microbeams is removed. Microbeam bending test is used to measure the Young’s modulus of GaN films grown on silicon (111) substrate, yielding a Young’s modulus of 330 GPa.
Author Lau, K. M.
Yang, Z.
Jia, S.
Wang, D.
Zhang, B. S.
Chen, K. J.
Wang, R. N.
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Snippet The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman...
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Title Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
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