Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique
The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decr...
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Published in: | Applied physics letters Vol. 88; no. 4; pp. 041913 - 041913-3 |
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American Institute of Physics
23-01-2006
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Abstract | The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decreases 47% when the silicon underneath the microbeams is removed. Microbeam bending test is used to measure the Young's modulus of GaN films grown on silicon (111) substrate, yielding a Young's modulus of 330 GPa. |
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AbstractList | The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decreases 47% when the silicon underneath the microbeams is removed. Microbeam bending test is used to measure the Young’s modulus of GaN films grown on silicon (111) substrate, yielding a Young’s modulus of 330 GPa. |
Author | Lau, K. M. Yang, Z. Jia, S. Wang, D. Zhang, B. S. Chen, K. J. Wang, R. N. |
Author_xml | – sequence: 1 givenname: Z. surname: Yang fullname: Yang, Z. email: eezcyang@ust.hk organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong – sequence: 2 givenname: R. surname: Wang middlename: N. fullname: Wang, R. N. organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong – sequence: 3 givenname: S. surname: Jia fullname: Jia, S. organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong – sequence: 4 givenname: D. surname: Wang fullname: Wang, D. organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong – sequence: 5 givenname: B. surname: Zhang middlename: S. fullname: Zhang, B. S. organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong – sequence: 6 givenname: K. surname: Lau middlename: M. fullname: Lau, K. M. organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong – sequence: 7 givenname: K. surname: Chen middlename: J. fullname: Chen, K. J. organization: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
BookMark | eNp1UE1PwzAMjdCQ2AYH_kGvHDLiZk27CxKaYCANuMC5yocrgrq0JOlh_HpSNsEJyZJt-fnZ783IxHUOCbkEtgAm-DUschBlBfyETIGVJeUA1YRMGWOcilUBZ2QWwkdqi5zzKdk9oX6XzmrZZqnwUkf09ktG27msa7IwhB6dQZNt5HO2s9p3IfpBx8FjyBqpfFqNaaz2I4J2jvYyJg6HhgbbWp14Yrrh7OeA5-S0kW3Ai2Oek7f7u9f1A92-bB7Xt1uqc1FEitiscg1VoUUOZqlypjQIVUgwlVJCshQSBS4rUMgbU2qzYtwIIyuTJGo-J1cH3vHd4LGpe2930u9rYPXoUw310aeEvTlgg7bxR_f_4D-z6l-z-DcvZnS7 |
CODEN | APPLAB |
CitedBy_id | crossref_primary_10_4028_www_scientific_net_KEM_483_14 crossref_primary_10_1088_0960_1317_19_9_095019 crossref_primary_10_1088_0022_3727_40_20_S19 crossref_primary_10_1088_0960_1317_21_3_035012 crossref_primary_10_1016_j_ijleo_2016_05_104 crossref_primary_10_1109_JPHOT_2018_2815016 crossref_primary_10_1007_s00542_010_1079_8 crossref_primary_10_1016_j_carbon_2017_12_035 crossref_primary_10_1016_j_sna_2008_12_005 crossref_primary_10_1088_0022_3727_45_8_085301 crossref_primary_10_1088_0957_4484_19_03_035305 crossref_primary_10_1007_s11664_016_4558_6 crossref_primary_10_1016_j_jcrysgro_2006_10_170 crossref_primary_10_1364_OE_18_005504 crossref_primary_10_1364_OE_18_000773 crossref_primary_10_1007_s00339_009_5228_9 crossref_primary_10_1007_s10854_017_7609_8 crossref_primary_10_1557_PROC_1068_C05_05 crossref_primary_10_35848_1882_0786_abe657 crossref_primary_10_1063_1_2713089 crossref_primary_10_1021_nn900580j crossref_primary_10_1116_1_2723750 crossref_primary_10_1038_srep04651 crossref_primary_10_1007_s12206_011_1214_1 crossref_primary_10_1063_1_2472558 crossref_primary_10_1007_s10854_014_2400_6 crossref_primary_10_1039_C4NR00495G crossref_primary_10_1038_srep37134 crossref_primary_10_1088_0960_1317_25_1_015001 crossref_primary_10_1364_OE_26_007672 crossref_primary_10_1063_1_4960375 crossref_primary_10_1088_0960_1317_20_2_027001 crossref_primary_10_1016_j_mee_2014_07_012 crossref_primary_10_1063_1_4930088 crossref_primary_10_1088_1361_6439_aacf5c crossref_primary_10_1109_LED_2009_2028905 crossref_primary_10_1002_pssr_200600063 crossref_primary_10_1063_1_4763459 crossref_primary_10_1116_1_3668114 crossref_primary_10_1364_JOSAB_29_001157 crossref_primary_10_1063_1_2817614 crossref_primary_10_1364_OE_18_002940 crossref_primary_10_1088_0960_1317_23_1_015010 crossref_primary_10_1007_s11664_007_0193_6 crossref_primary_10_1016_j_mee_2013_04_007 crossref_primary_10_1016_j_optmat_2023_114717 |
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ContentType | Journal Article |
Copyright | 2006 American Institute of Physics |
Copyright_xml | – notice: 2006 American Institute of Physics |
DBID | AAYXX CITATION |
DOI | 10.1063/1.2167813 |
DatabaseName | CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | CrossRef |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 1077-3118 |
EndPage | 041913-3 |
ExternalDocumentID | 10_1063_1_2167813 apl |
GrantInformation_xml | – fundername: UNSPECIFIED grantid: HKUST6317/04E |
GroupedDBID | -DZ -~X .DC 1UP 2-P 23M 4.4 53G 5GY 5VS 6J9 6TJ A9. AAAAW AABDS AAEUA AAGZG AAPUP AAYIH AAYJJ ABFTF ABJNI ABRJW ABZEH ACBEA ACBRY ACGFO ACGFS ACLYJ ACNCT ACZLF ADCTM AEGXH AEJMO AENEX AFATG AFHCQ AGKCL AGLKD AGMXG AGTJO AHSDT AIAGR AJJCW AJQPL ALEPV ALMA_UNASSIGNED_HOLDINGS AQWKA ATXIE AWQPM BPZLN CS3 D0L EBS EJD ESX F.2 F5P FDOHQ FFFMQ HAM M6X M71 M73 MVM N9A NEJ NPSNA O-B P2P RIP RNS ROL RQS SJN TAE TN5 UCJ UPT UQL WH7 XJE YZZ ~02 AAYXX BDMKI CITATION |
ID | FETCH-LOGICAL-c265t-eef92c185c621d4b20bc16b5a1d8bb6a06a0ae6e481be3fd7cd903d6da8d951c3 |
ISSN | 0003-6951 |
IngestDate | Thu Nov 21 21:21:09 EST 2024 Fri Jun 21 00:17:44 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 4 |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-c265t-eef92c185c621d4b20bc16b5a1d8bb6a06a0ae6e481be3fd7cd903d6da8d951c3 |
ParticipantIDs | crossref_primary_10_1063_1_2167813 scitation_primary_10_1063_1_2167813Mechanical_character |
PublicationCentury | 2000 |
PublicationDate | 2006-01-23 |
PublicationDateYYYYMMDD | 2006-01-23 |
PublicationDate_xml | – month: 01 year: 2006 text: 2006-01-23 day: 23 |
PublicationDecade | 2000 |
PublicationTitle | Applied physics letters |
PublicationYear | 2006 |
Publisher | American Institute of Physics |
Publisher_xml | – name: American Institute of Physics |
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SSID | ssj0005233 |
Score | 2.1529856 |
Snippet | The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman... |
SourceID | crossref scitation |
SourceType | Aggregation Database Publisher |
StartPage | 041913 |
Title | Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique |
URI | http://dx.doi.org/10.1063/1.2167813 |
Volume | 88 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3dS-QwEA-rcqgP4vmBX3eEw7eStW26afsounci3HK4Cue9lKRJQFi7C3Uf9K930rRp1w_wDg6WsgxtKTM_Jr8Mk98gdMyjJPWF0kQIrYiZYU3SKBRE0VjBegKQrkRcL8bx6HdyPoyGvV4zWq21_ddIgw1ibU7O_kW03UvBAP8h5nCFqMP1Q3H_qcxZXqv74cSYnxwxLOdlNfVWej_4yLs37XhWQnYO-25Pc1GNDbK0FO4g04LMKglOSMekvJsAcArPCb92qW3DZ22tpPQm1UEhR9lv68L0n35bw7eWq743csZL27w7fnXXef91gcKeIe6cCeDFYvfDL_stC6mZEpbW6rPKZmM_NkXUOkHX6TpJOrCMOrnXj2DvSTsruTUQ-uZKAdTMFC36YQDLdfPYgvA2n02W0EoICczkz_HlqNM6RGkzidF8cqNYxeiJe-ECz1kFOmM7Kzrk5XoTbdS7Dnxq4fIZ9VSxhdY7WpRb6FPtq21030IIv4QQnmrsIIQBIPgFhHALISwe8XsQwg5CO-jm-_D67ILUUzlIHrLBA1FKp2EONC9nYSAjEfoiD5gY8EAmQjDuw48rpiLYECmqZZzL1KeSSZ5I8FVOd9FyMS3UHsLJQEc6j5UepNpI5nJgryJOJWxScumLZB99a3yYzaz4SlY1TTCaBVnt6H0UO---f1frucx57uCfnzxEay3Sj9AyOFl9QUulnH-tkPIMZwWVmw |
link.rule.ids | 315,782,786,27933,27934 |
linkProvider | Multiple Vendors |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Mechanical+characterization+of+suspended+GaN+microstructures+fabricated+by+GaN-on-patterned-silicon+technique&rft.jtitle=Applied+physics+letters&rft.au=Yang%2C+Z.&rft.au=Wang%2C+R.+N.&rft.au=Jia%2C+S.&rft.au=Wang%2C+D.&rft.date=2006-01-23&rft.pub=American+Institute+of+Physics&rft.issn=0003-6951&rft.eissn=1077-3118&rft.volume=88&rft.issue=4&rft.spage=041913&rft.epage=041913-3&rft_id=info:doi/10.1063%2F1.2167813&rft.externalDocID=apl |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0003-6951&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0003-6951&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0003-6951&client=summon |