Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

• Published in: Applied physics letters Vol. 88; no. 4; pp. 041913 - 041913-3
• Main Authors: Yang, Z., Wang, R. N., Jia, S., Wang, D., Zhang, B. S., Lau, K. M., Chen, K. J.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 23-01-2006
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2167813

The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decreases 47% when the silicon underneath the microbeams is removed. Microbeam bending test is used to measure the Young's modulus of GaN films grown on silicon (111) substrate, yielding a Young's modulus of 330 GPa.