Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation

• Published in: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41; no. 6; pp. 2291 - 2296
• Main Authors: Hua-Fang Wei, Chung, J.E., Kalkhoran, N.M., Namavar, F., Annamalai, N.K., Shedd, W.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-12-1994; Institute of Electrical and Electronics Engineers
• Subjects: Annealing; Applied sciences; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; Electronics; ENERGY LEVELS; Exact sciences and technology; FABRICATION; FIELD EFFECT TRANSISTORS; GERMANIUM IONS; HARDENING; Implants; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Insulation; ION IMPLANTATION; IONS; Laboratories; LEAKAGE CURRENT; MOS TRANSISTORS; MOSFET; MOSFET circuits; Oxidation; PHYSICAL RADIATION EFFECTS; Power engineering and energy; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICES; Silicon on insulator technology; Temperature; Testing, measurement, noise and reliability; TRANSISTORS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems; Silicon on insulator technology; Field effect transistor; Radiation resistance; Ion implantation; Depletion mode; Ion irradiation; MOS transistor; Experimental study; Reliability; Germanium ion
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.340578

This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a silicon-on-insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.< >