A nanoscale characterisation of extended defects in glassy-like As2Se3 semiconductors with PAL technique

A meaningful interpretation of positron lifetime characteristics for glassy-like g-As2Se3 is developed taking into account calculations of Jensen et al. (J. Non-Cryst. Solids 170 (1994) 57) for positrons trapped by free-volume extended defects in orthorhombic As2Se3 and void volume distribution for...

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Bibliographic Details

Published in:	Physica. B, Condensed matter Vol. 340-342; pp. 960 - 964
Main Authors:	Shpotyuk, O., Kovalskiy, A., Filipecki, J., Hyla, M., Kozdras, A.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 31-12-2003
Subjects:	Extended defects Glass Positron annihilation Extended defects Glass Positron annihilation
Online Access:	Get full text
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