Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI

A novel superjunction (SJ) lateral double-diffused MOSFET ( >950 V) with a thin layer SOI combining the advantage of low specific on-resistance R on,sp of the SJ and the high breakdown voltage VB of the thin SOI is proposed and experimentally demonstrated in this letter. Based on our previously d...

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Bibliographic Details

Published in:	IEEE electron device letters Vol. 38; no. 11; pp. 1555 - 1558
Main Authors:	Zhang, Wentong, Zhan, Zhenya, Yu, Yang, Cheng, Shikang, Gu, Yan, Zhang, Sen, Luo, Xiaorong, Li, Zehong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Format:	Journal Article
Language:	English
Published:	IEEE 01-11-2017
Subjects:	Breakdown voltage breakdown voltage (VB) Dielectrics Doping Electric fields Optimization Silicon-on-insulator sp specific on-resistance (Ron Substrates Superjunction T-SJ LDMOS thin layer SOI
Online Access:	Get full text
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