Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip

• Published in: IEEE photonics technology letters Vol. 24; no. 16; pp. 1412 - 1414
• Main Authors: Chang, L. M., Shoou-Jinn Chang, Jiao, Z. Y., Shen, C. F., Ko, T., Hon, S. J., Chiou, Y., Chiou, H. Y.
• Format: Journal Article
• Language: English
• Published: IEEE 15-08-2012
• Subjects: Current spreading; Gallium nitride; GaN; Gold; Light emitting diodes; metallic wire; Power generation; Proximity effects; Resistance; side-view LEDs; Wires
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2012.2205236

The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It was also found that further the LED output power could be enhanced to 9.68 mW by partially thinning down the metallic stripe chemically. These improvements could be attributed to the more uniform current distribution across the LED chip.