Buried-heterostructure lasers fabricated by in situ processing techniques

We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl2 etching. Ba...

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Bibliographic Details
Published in:	Applied physics letters Vol. 57; no. 18; pp. 1864 - 1866
Main Authors:	WANG, Y. L, TEMKIN, H, HARRIOTT, L. R, LOGAN, R. A, TANBUN-EK, T
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 29-10-1990
Subjects:	BEAMS CURRENTS ELECTRIC CURRENTS ENGINEERING EPITAXY ETCHING Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) ION BEAMS LASERS Optical materials Optics Physics SAMPLE PREPARATION SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS SURFACE FINISHING 426002 > Engineering > Lasers & Masers > (1990-) THRESHOLD CURRENT VAPOR PHASE EPITAXY WAVEGUIDES Gallium Indium Arsenides Mixed Manufacturing Indium Phosphides Ultrahigh vacuum Epitaxy Laser
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Summary:	We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl2 etching. Base laser structures and overgrowth were carried out by atmospheric pressure metalorganic vapor phase epitaxy. The resulting lasers have low-threshold currents of ∼62 mA.
Bibliography:	None
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.104042