Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors

We have investigated InGaAs strained channels of high-electron-mobility transistor heterostructures with In compositions of 70% and 80% and channel thicknesses covering the range of 3–14 nm. Transmission electron microscopy characterization has revealed the existence of two regimes of strain relaxat...

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Bibliographic Details

Published in:	Applied physics letters Vol. 74; no. 25; pp. 3818 - 3820
Main Authors:	Peiró, F., Cornet, A., Beck, M., Py, M. A.
Format:	Journal Article
Language:	English
Published:	21-06-1999
Online Access:	Get full text
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