Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases

• Published in: MATEC Web of Conferences Vol. 189; p. 11006
• Main Authors: Thi Tuoi, Phan, Xuan Hien, Pham, Anh Tuan, Do
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Les Ulis EDP Sciences 01-01-2018
• Subjects: Binary mixtures; Boltzmann transport equation; Electric fields; Electron transport; Gases; Helium; Industrial applications; Mathematical analysis; Neon; Plasma enhanced chemical vapor deposition; Rare gases; Transport properties; Xenon
• ISSN: 2261-236X; 2274-7214; 2261-236X
• DOI: 10.1051/matecconf/201818911006

Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.