Modeling electromigration and the void nucleation in thin-film interconnects of integrated circuits

The modern tendency for increasing the productivity of microelectronic devices at the expense of the size shrinkage and the development of densely packed multilevel microelectronic structures stipulates the rising concern for the reliability of integrated circuits. The damage of integrated circuits...

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Bibliographic Details
Published in:	International journal of fracture Vol. 109; no. 1; pp. 91 - 121
Main Authors:	Goldstein, R V, Sarychev, ME, Shirabaikin, D B, Vladimirov, A S, Zhitnikov, YuV
Format:	Journal Article
Language:	English
Published:	Dordrecht Springer Nature B.V 01-05-2001
Subjects:	Aluminum Circuit reliability Crystal structure Crystallinity Deformation mechanisms Depletion Differential equations Electromigration Failure mechanisms Inclusions Integral equations Integrated circuits Interconnections Mathematical models Microelectronics Nucleation Shrinkage Stresses Thin films Three dimensional models Vacancies
Online Access:	Get full text
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