Influence of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures

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Bibliographic Details
Published in:	Journal of electronic materials Vol. 19; no. 7; pp. 747 - 751
Main Authors:	AS, D. J, FREY, JANTZ, W, KAUFEL, G, KÖHLER, K, ROTHEMUND, W, SCHWEIZER, ZAPPE, H. P
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-07-1990
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Degradation Reactive ion etching Luminescence Aluminium Gallium Arsenides Mixed Multiple quantum well Electron transfer Heterojunction
Online Access:	Get full text
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Description
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02655244