Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

In this Letter, the coupling effect between multi-traps in HfO2 gate dielectrics is experimentally studied in scaled high-κ/metal-gate metal oxide semiconductor field effect transistors (MOSFETs). Deviated from conventional understanding, mechanism that affects trap coupling is found, which is origi...

Full description

Bibliographic Details

Published in:	Applied physics letters Vol. 104; no. 26
Main Authors:	Ren, Pengpeng, Wang, Runsheng, Jiang, Xiaobo, Qiu, Yingxin, Liu, Changze, Huang, Ru
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 30-06-2014
Subjects:	Applied physics Carrier density Circuits Coupling Dependence Dielectrics Field effect transistors Hafnium oxide Metal oxide semiconductors Metal oxides MOSFETs Perturbation Semiconductor devices Transistors Variation
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!