Variation of microtwin content with thickness in cadmium telluride films grown on sapphire by metalorganic chemical vapor deposition

• Published in: Applied physics letters Vol. 60; no. 21; pp. 2619 - 2621
• Main Authors: GLASS, H. L, WOODS, M. R. A
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 25-05-1992
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Cadmium Tellurides; Crystal twin; Semiconductor materials; Crystal defect density; Epitaxy; Organometallic compound; Crystal face; Chemical etching; Experimental study; Surface treatment; Thin film; Thickness; Growth from vapor
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.106899

X-ray diffraction was used to measure microtwinning in (111) CdTe epitaxial films grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition. The concentration of microtwins is high near the interface but drops off rapidly with distance. For films grown to thicknesses up to ≊10 μm, the microtwin content is constant and relatively low (much less than 1 vol %) away from the interface. For films grown more than ≊10 μm thick there is a substantial increase in the microtwin content. These microtwins are concentrated near the film surface.